BUV27 ? BUV27a 29/09/2012 comset semiconductors 1 3 semiconductors high-speed,npn power transistors in a to-220 envelope. they are intended for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. compliance to rohs. absolute maximum ratings symbol ratings value unit BUV27 BUV27a v cbo collector-base voltage i e = 0 240 300 v v ceo collector-emitter voltage i b = 0 120 150 v v ebo emitter-base voltage i c = 0 7 7 v i c collector current 12 a i cm collector peak current t p = 10ms 20 a i b base current 4 a i bm base current t p = 10ms 6 a p t power dissipation 85 85 w t j junction temperature 175 c t stg storage temperature range -65 to 175 limiting values in accordance with the absolute maximum system (iec 134) thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base 1.76 c/w silicon power transistors www.datasheet.net/ datasheet pdf - http://www..co.kr/
BUV27 ? BUV27a 29/09/2012 comset semiconductors 2 3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) value unit min typ max i cex collector cutoff current (*) v ce =v cesmax v be = 1.5v, t j = 125c BUV27 - - 1 ma BUV27a i ebo emitter cutoff current v eb = 5 v, i c = 0 BUV27 - - 1 ma BUV27a v ceosust collector-emitter sustaining voltage i b = 0 , i c = 0.2 a l = 25 mh BUV27 120 - - v BUV27a 150 - - v ebo emitter-base breakdown voltage i e = 50 ma , i c = 0 BUV27 7 - 30 v BUV27a v ce(sat) collector-emitter saturation voltage i c = 4 a, i b = 400 ma BUV27 - - 0.7 v i c = 4 a, i b = 400 ma BUV27a - - 0.7 i c =8 a, i b = 0.8 a BUV27 - - 1.5 i c =7 a, i b = 0.7 a BUV27a - - 1.5 v be(sat) base-emitter saturation voltage i c =8 a, i b = 0.8 a BUV27 - - 2 v i c =7 a, i b = 0.7 a BUV27a - - 2 switching times symbol ratings test condition(s) value unit min typ max t on turn-on time for BUV27 i c = 8 a , v cc = 50 v i b1 = 0.8 a , i b2 = 1.6 a for BUV27a i c = 7 a , v cc = 50 v i b1 = 0.7 a , i b2 = 1.4 a BUV27 - 0.4 0.8 s BUV27a t off turn-off time BUV27 - 0.5 1.2 BUV27a t f fall time BUV27 - 0.12 0.25 BUV27a (*) mesured with a half-sinewave voltage (curve tracer). www.datasheet.net/ datasheet pdf - http://www..co.kr/
BUV27 ? BUV27a 29/09/2012 comset semiconductors 3 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter package collector www.datasheet.net/ datasheet pdf - http://www..co.kr/
|
